PX7104 ADVANCED POWER SEMICONDUCTOR DEVICES SYLLABUS 2013 REGULATION

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PX7104 ADVANCED POWER SEMICONDUCTOR DEVICES
PX7104 ADVANCED POWER SEMICONDUCTOR DEVICES

PX7104                     ADVANCED POWER SEMICONDUCTOR DEVICES              L T P C                                                                                                                                3 0 0 3

OBJECTIVES :

  • To improve power semiconductor device structures for adjustable  speed motor control applications.
  • To understand   the  static  and  dynamic  characteristics  of   current   controlled   power semiconductor devices
  • To understand  the  static  and  dynamic  characteristics  of   voltage  controlled  power semiconductor devices
  • To enable  the  students  for  the  selection  of  devices  for    different  power  electronics applications
  •  To understand the control and firing circuit for different devices.

UNIT I      INTRODUCTION                                                                                            9

Power switching devices overview – Attributes of an ideal switch, application requirements, circuit symbols; Power handling capability – (SOA); Device selection strategy – On-state and switching losses – EMI due to switching – Power diodes   – Types, forward and reverse characteristics, switching characteristics – rating.

UNIT II     CURRENT CONTROLLED DEVICES                                                               9

BJT’s – Construction, static characteristics, switching characteristics; Negative temperature co- efficient and secondary breakdown; Power darlington – Thyristors – Physical and electrical principle underlying operating mode, Two transistor analogy – concept of latching; Gate and switching  characteristics;  converter  grade  and  inverter  grade  and  other  types;  series  and parallel operation; comparison of BJT and Thyristor – steady state and dynamic models of BJT & Thyristor.

UNIT III        VOLTAGE CONTROLLED DEVICES                                                           9

Power MOSFETs and IGBTs – Principle of voltage controlled devices, construction, types, static and switching characteristics, steady state and dynamic models of MOSFET and IGBTs – Basics of GTO, MCT, FCT, RCT and IGCT.

UNIT IV       FIRING AND PROTECTING CIRCUITS                                                       9

Necessity of isolation, pulse transformer, optocoupler – Gate drives circuit: SCR, MOSFET, IGBTs and base driving for power BJT. –   Over voltage, over current and gate protections; Design of snubbers.

UNIT V      THERMAL PROTECTION                                                                               9

Heat transfer – conduction, convection and radiation; Cooling – liquid cooling, vapour – phase cooling; Guidance for hear  sink  selection  –  Thermal  resistance  and  impedance  -Electrical analogy of thermal components, heat sink types and design – Mounting types.

                                                                                                        TOTAL : 45 PERIODS

REFERENCES

  1. B.W Williams ‘Power Electronics Circuit Devices and Applications’.
  2. Rashid M.H., ” Power Electronics Circuits, Devices and Applications “, Prentice Hall India, Third Edition, New Delhi, 2004.
  3. MD Singh and K.B Khanchandani, “Power Electronics”, Tata McGraw Hill, 2001.
  4. Mohan, Undcland and Robins, “Power Electronics – Concepts, applications and Design, John Wiley and Sons, Singapore, 2000.

PX7104 ADVANCED POWER SEMICONDUCTOR DEVICES SYLLABUS 2013 REGULATION PDF   Click Here To Download

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